View IRFBC30APBF_1150211.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMPS MOSFET
PD - 95700
IRFBC30APBF
HEXFET(R) Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free
l
VDSS
600V
Rds(on) max
2.2
ID
3.6A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001)
l
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
3.6 2.3 14 74 0.69 30 7.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topology:
l
Single transistor Flyback
Notes
through are on page 8
www.irf.com
1
9/10/04
IRFBC30APBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 600 --- --- 2.0 --- --- --- --- Min. 2.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.67 --- --- --- --- --- --- Typ. --- --- --- --- 9.8 13 19 12 510 70 3.5 730 19 31 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 2.2 VGS = 10V, ID = 2.2A 4.5 V VDS = VGS, ID = 250A 25 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 2.2A 23 ID = 3.6A 5.4 nC VDS = 480V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 3.6A ns --- RG = 12 --- R D = 82,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
290 3.6 7.4
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.50 ---
Max.
1.7 --- 62
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
V SD t rr Q rr ton
Conditions D MOSFET symbol --- --- 3.6 showing the A G integral reverse --- --- 14 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 3.6A, VGS = 0V --- 400 600 ns TJ = 25C, IF = 3.6A --- 1.1 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFBC30APBF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
0.1
4.5V
0.01 0.1
4.5V 20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.6A
I D , Drain-to-Source Current (A)
2.5
10
TJ = 150 C
1
2.0
1.5
TJ = 25 C
0.1
1.0
0.5
0.01 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFBC30APBF
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
20
ID = 3.6A VDS = 480V VDS = 300V VDS = 120V
16
1000
C, Capacitance(pF)
Ciss
100
12
Coss
8
10
Crss
1 1 10 100 1000
4
0
FOR TEST CIRCUIT SEE FIGURE 13
0 4 8 12 16 20 24
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
10
10
10us
TJ = 150 C TJ = 25 C
1
100us
1
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFBC30APBF
4.0
V DS VGS
RD
ID , Drain Current (A)
3.0
RG 10V
D.U.T.
+
-VDD
2.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFBC30APBF
EAS , Single Pulse Avalanche Energy (mJ)
15V
700 600 500 400 300 200 100 0
TOP BOTTOM
VDS
L
DRIVER
ID 1.6A 2.3A 3.6A
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
25
50
75
100
125
150
Starting T , Junction Temperature( C) J
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
VG
740
Charge
V DSav , Avalanche Voltage ( V )
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
720
700
50K 12V .2F .3F
680
D.U.T. VGS
3mA
+ V - DS
660
IG
ID
640 0.0 1.0 2.0 3.0 4.0 Fig 12d. Typical Drain-to-Source Voltage IAV , Avalanche Current Vs. Avalanche Current ( A)
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFBC30APBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRFBC30APBF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IG B T s, C oP A C K 1 - GATE 1 - G A T2 - DRAIN E 1- G A TE 2 - D R A3 N SOURCE 2 - C O L L E C T O R I3- S O U R C E 3 - E M IT T E R 4 - DRAIN
L E A D A S S IG N M E N T S
HEXFET
14.09 (.555) 13.47 (.530)
4- D R A IN
4.06 (.160) 3.55 (.140)
4- C O LLEC TO R
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M B A M
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E X AM P L E : T H I S I S A N IR F 1 0 1 0 L OT COD E 1789 AS S E MB L E D O N W W 19, 1 997 I N T H E A S S E M B L Y L I N E "C " IN T E R N A T I O N A L R E C T IF IE R LOGO AS S E M B L Y LOT CODE P AR T N U MB E R
N o te : " P " in a s s e m b ly lin e p o s it io n in d ic a te s " L e a d -F re e "
D AT E C O D E YE AR 7 = 1997 W E E K 19 L IN E C
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 41mH
TJ 150C
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25, IAS = 3.6A. (See Figure 12)
ISD 3.6A, di/dt 170A/s, VDD V(BR)DSS,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFBC30APBF

	To Download IRFBC30APBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .